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Staebler–Wronski effect : ウィキペディア英語版
Staebler–Wronski effect

The Staebler–Wronski Effect (SWE) refers to light-induced metastable changes in the properties of hydrogenated amorphous silicon.
The defect density of hydrogenated amorphous silicon (a-Si:H) increases with light exposure, causing an increase in the recombination current and reducing the efficiency of the conversion of sunlight into electricity.
It was discovered by David L. Staebler and Christopher R. Wronski in 1977. They showed that the dark current and photoconductivity of hydrogenated amorphous silicon can be reduced significantly by prolonged illumination with intense light. However, on heating the samples to above 150 °C, they could reverse the effect.
==Explanation==


抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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